CVD Graphene on Quartz Substrate
$0.00
| Product Name |
CVD Graphene on Quartz Substrate |
| Stock No. | NCZ-GSW-0020 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
PRODUCT DETAIL
CAS No.: 7782-42-5 (graphene)
| Sheet Resistance | <600Ω/sq |
| Custom Order | <300Ω/sq |
| Transparency | >95% |
| CVD Graphene | Substrate |
| 1cm x 1cm | Diameter: 1inch, Thickness: 3mm* |
| 1inch x 1inch | 30mm x 30mm, Thickness: 1mm |
We can also provide 15mm x 15mm and 1mm thick substrate and other sizes based on your request. Please contact us for more information.
Categories: CVD Graphene, Graphene Nanostructures
Description
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
Shipping & Delivery
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| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
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| Custom Order | <300Ω/sq |
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| CAS Number | 7440-40-0 |
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| Carrier | Water, Ethanol, IPA, NMP, Toluene, Methanol, Dispersion Customization Possible |
| APS | 5-7 nm |
| Package Size | 1-100 mL |
| Composition: |
Aminated Graphene Quantum Dots |
| Appearance: | Colorless solution |
| PL peak: | 440 nm (reference only, the actual value may vary) |
| Particle Size: | < 7 nm |
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| APS | 5-10 nm |
| Package Size | 1-100 mL ( Large Volume packs are also available) |
| Composition: |
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| Appearance: | Colorless solution |
| PL peak: | 460 nm (reference only, the actual value may vary) |
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| Purity | > 99.9% |
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| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
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Graphene & Carbon Nanotubes Water Paste
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| Purity | ≥99.5% |
| Diameter | Graphene 5-7 μm, CNT Outside Diameter: 50-80 nm, Inside Diameter: 5-15 nm (Customization possible) |
| Length | 10-20 μm (Customization possible) |
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| Diameter | 5-10 µm (ask for Customization) |
| Thickness | 1-20 nm (ask for Customization) |
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Graphene on Ultra-Flat Thermal SiO2 Substrate
| Product Name | Graphene on Ultra-Flat Thermal SiO2 Substrate |
| Stock No. | NCZ-GSW-0011 |
| Purity | > 99.9% |
| Graphene Film | |
| FET Electron Mobility on Al2O3 | 2000 cm2/Vs |
| Hall Electron Mobility on SiO2/Si | 4000 cm2/Vs |
| Sheet Resistance | 450±40 Ω/sq (1cm x1cm) |
- Four thicknesses of CVD graphene: Available in either 1, 2, 3-5 or 6-8 layers
- The Ultra-flat Thermal SiO2 Substrate consists of a 200 nm thermally grown SiO2 film on an ultra-flat silicon wafer with a normal thickness of 675 µm. The size is 5mm x 5mm.
- Graphene coverage of the TEM grid is 75-95 %
| Type | Thickness of the Graphene | Transparency | Support Film |
| 1 Layer | ~0.35nm | ~96.4% | Ultra-flat Silicon |
| 2 Layers | ~0.7nm | ~92.7% | Ultra-flat Silicon |
| 3-5 Layers | 1.0-1.7nm | ~85.8-90.4% | Ultra-flat Silicon |
| 6-8 Layers | 2.1-2.8nm | ~78.5-83.2% | Ultra-flat Silicon |
