Silicon Germanium Wafers
$0.00
Silicon-Germanium Wafers
| Product Name | Silicon Germanium Wafers |
| Product Code | NCZ-WM-0017 |
| CAS | 7440-56-4 |
| Diameter | 50.8 mm, also available in 3, 5, 6, 12″ (Ask for customization) |
| Type | N-Type also available as P-type and without doping |
| Doping | Antimony/Customization possible |
| Orientation | <100>/other orientations are also available |
| Surface | Both/Single Side Polished |
| Wafer Thickness | 500 /- 25 µm (Ask for customization) |
| Resistivity | 10.5 g/cm³ |
Please enquire for other wafers having different thicknesses, Diameter, Length, and sizes, etc.
If the item shown is not exactly what you require please let us know by sending us a message
Description
Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com
Customization:
If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.
Shipping & Delivery
Related products
Doped Silicon Wafer
Doped Silicon Wafer
| Product Name | Doped Silicon Wafer |
| Product Code | NCZ-WM-0016 |
| CAS | 7440-21-3 |
| Diameter (mm) | 2” (50.8 mm), also available in 3, 4, 6, 8, 12 inches |
| Type | P-Type and N-Type |
| Doping | Boron etc. |
| Crystal Orientation | <100> /other orientations are also available |
| Surface | Single/Both Side Polished |
| Thickness | 200-750 μm |
| Resistivity | 1-10 ohm-cm |
| Crystal method | CZ |
| RRG (%) | ≤12 |
| Oxygen Contents (ppm) | 12.5-16.5 |
| Carbon Contents (ppm) | ≤1 |
Germanium Wafers
Germanium Wafer
| Product Name | Germanium Wafer |
| Product Code | NCZ-WM-0018 |
| CAS | 7440-56-4 |
| Diameter | 50.8 mm, also available in 3, 5, 6, 12″ (Customization possible) |
| Type | Un-doped (Customization possible) |
| Orientation | <100>/other orientations are also available |
| Surface | Both/Single Side Polished |
| Wafer Thickness | 500 /- 25 µm (Customization possible) |
| Resistivity | 5-40 Ω-cm (Customization possible) |
Microcrystalline cellulose Wafer
Microcrystalline Cellulose Wafer
| Product Name | Microcrystalline Cellulose Wafer |
| Product Code | NCZ-WM-0021 |
| Diameter | 150 mm ± 1mm (Ask for the customization) |
| Thickness | 500 µm (Ask for the customization) |
| Purity | 97.0 – 100% |
| Shape | Round (Ask for the customization) |
| pH | 5.0 – 7.5 |
| Starch & Dextrins | Absent |
| Organic Impurities | Absent |
| Water Solubility | < 0.2% |
| Arsenic | 2 ppm |
| Heavy Metals | 10 ppm |
| Sulphated Ash | 0.2% |
| Loss in Drying | 6% |
N Doped Silicon Wafer (4 inch, N Type, Phosphorus Doped)
N Doped Silicon wafers
| Product Name | Phosphorus Doped Silicon Wafer |
| Product Code | NCZ-WM-0014 |
| Diameter | 4″ (101.6mm), also available in 2, 3, 5, 6, 12″ |
| Type | N-Type |
| Doping | Phosphorous, Antimony, etc. (customization possible) |
| Crystal Orientation | <100> /other orientations are also available |
| Surface | Single /Both Side Polished |
| Thickness | 250-500 μm (customization possible) |
| Resistivity | 1-10 ohm-cm |
| Crystal method | CZ |
| RRG | ≤12 % |
| Oxygen Contents | 12.5-16.5 ppm |
| Carbon Contents | ≤1 ppm |
Platinum coated Silicon Wafer
| Product Name |
Platinum Coated Silicon Wafer |
| Product Code | NCZ-WM-0027-19 |
| Diameter | 4” (101.6 mm), also available in 2, 3, 5, 6, 12″ |
| Coating | Platinum (Ask for Coating Customization) |
| Crystal Orientation | <100> /other orientations are also available |
| Surface | Single/Both Side Polished |
| Thickness | 20-300 nm (customization is also possible) |
| Resistivity | 1-10 ohm-cm |
| Crystal method | CZ |
| RRG | ≤12 % |
| Oxygen Contents | 12.5-16.5 ppm |
| Carbon Contents | ≤1 ppm |
Sapphire Wafer C Plane (Al2O3)
Sapphire Wafer
| Product Name | Sapphire Wafer C Plane |
| Product Code | NCZ-WM-0022 |
| Cas No. | 1344-28-1 |
| Diameter | 2”, also available in 3, 5, 6, 12″ (Ask for Customization) |
| Thickness | 330 μm ± 15μm |
| Crystal Orientation | C-Plane (±0.5 Deg) |
| Surface | Single/Double Side Polished |
| Crystal | Single Crystal of Al2O3 |
| Density | 3.97 gram/cm2 |
| Crystal method | CZ |
| Carbon Contents | ≤1 ppm |
Silicon Carbide Wafers N-Type (Phosphorus Doped)
Silicon Carbide Wafers
SILICON CARBIDE CRYSTAL SUBSTRATE
| Product Name | Silicon Carbide Wafers |
| Product Code | NCZ-WM-0019 |
| CAS No. | 409-21-2 |
| Diameter | 12” (304.8 mm), also available in 2, 3, 4, 5, 6″ Also available in 10 x 10 mm Size |
| Type | N-Type |
| Doping | Phosphorous/ Ask for customization |
| Crystal Orientation | <100> /other orientations are also available |
| Surface | Single/Both Side Polished |
| Thickness | 275 μm /Ask for customization |
| Resistivity | 1-10 ohm-cm |
| Crystal method | CZ |
| RRG | ≤12 % |
| Oxygen Contents | 12.5-16.5 ppm |
| Carbon Contents | ≤1 ppm |
Silicon Wafer with Silicon Dioxide Layer
Silicon Dioxide wafer
thermally grown sio2
oxide-coated silicon wafer
| Product Name | Silicon Wafer Silicon Dioxide Layer |
| Product Code | NCZ-WM-0015 |
| CAS | 7440-21-3 |
| Diameter | 100 mm, also available in 2, 3, 5, 6, 12″ |
| Type | P/N Type, Undoped |
| Orientation | <100> /other orientations are also available |
| Surface | Single /Both Side Polished |
| Thickness | 400 μm, ask for other wafer thickness |
| Resistivity | 0.01-0.02 Ω-cm |
| SiO2 Thickness Layer | 200 nm (customization available) |