Single Crystal Silicon Wafer Diameter Intrinsic (4-inch)

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Single Crystal Silicon Wafer Diameter Intrinsic (4-inch)

Product Name: Single Crystal Silicon Wafer Diameter Intrinsic (4-inch)

Product Name Single Crystal Silicon Wafer
Cat No. NCZ-NSC327/20
Diameter 4 inches
Doping undoped
Thickness 400~415+/-10um
Resistivity 4000 5000 ohms.cm Undoped
Orientation <100>+/-0.5
Polishing one side polished
Application Research Material
Thickness 525 Micron
Resistivity 1-10 ohm-cm
Polished Single side polished

Provided in Single wafer case.

Description:

Single Crystal Silicon Wafer thickness Is determined by the mechanical strength of the material used the wafer must be thick enough to support its own weight without cracking during handling. Wafers are grown from crystal having a regular crystal structure, with silicon having a diamond cubic structure. Orientation is defined by the Miller index with (100) or (111) faces being the most common for silicon. Ion implantation depends on the wafer’s crystal orientation since each direction offers distinct paths the transport.

Note: SSP = Single Side Polished, DSP = Double Side Polished, E = Etched, C = AsCut, Material – CZ unless noted, L = Lapped, Und = Undoped (Intrinsic)

Description

Note: For pricing & ordering information, please contact us at sales@nanochemazone.com
Please contact us for quotes on Larger Quantities & Customization. E-mail: contact@nanochemazone.com

Customization:

If you are planning to order large quantities for your industrial and academic needs, please note that customization of parameters (such as size, length, purity, functionalities, etc.) are available upon request.

Other composition and customer’s specified configurations can be delivered upon request. Stabilizer, pH Value, Pack Size, and Contents of Artificial Lysosomal Fluid are customizable.
Contact us for Customization: sales@nanochemazone.com
Transportation and storage: Transportation at room temperature, storage at 4 ℃. For Longterm Storage Freeze it at -20 ℃

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